Guangdong Hottech-Single FETs, MOSFETs-IRLML5103

Description

Drain to Source Voltage;30V/Gate Charge(Qg);5.1nC@10V/Number;1 P-Channel/Pd - Power Dissipation;540mW/RDS(on);1Ω@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);18pF/Current - Continuous Drain(Id);760mA/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input Capacitance;75pF


P-Channel 30V 0.76A 540mW Surface Mount SOT-23

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Drain to Source Voltage;30V/Gate Charge(Qg);5.1nC@10V/Number;1 P-Channel/Pd - Power Dissipation;540mW/RDS(on);1Ω@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);18pF/Current - Continuous Drain(Id);760mA/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;30V/Gate Charge(Qg);5.1nC@10V/Number;1 P-Channel/Pd - Power Dissipation;540mW/RDS(on);1Ω@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);18pF/Current - Continuous Drain(Id);760mA/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input Capacitance;75pF


    P-Channel 30V 0.76A 540mW Surface Mount SOT-23

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