Guangdong Hottech-Single FETs, MOSFETs-S8205A

Description

Drain to Source Voltage;20V/Gate Charge(Qg);11nC@4V/Number;2 N-Channel/Type;N-Channel/Pd - Power Dissipation;1.25W/RDS(on);25mΩ@4V/Reverse Transfer Capacitance (Crss@Vds);125pF/Current - Continuous Drain(Id);5A/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input Capacitance;800pF


N-Channel Array 20V 5A 1.25W Surface Mount SOT-23-6

Product form

Drain to Source Voltage;20V/Gate Charge(Qg);11nC@4V/Number;2 N-Channel/Type;N-Channel/Pd - Power Dissipation;1.25W/RDS(on);25mΩ@4V/Reverse Transfer Capacitance (Crss@Vds);125pF/Current - Continuous Drain(Id);5A/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input Capacitance;800pFN-Channel Array... Read more

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    Description

    Drain to Source Voltage;20V/Gate Charge(Qg);11nC@4V/Number;2 N-Channel/Type;N-Channel/Pd - Power Dissipation;1.25W/RDS(on);25mΩ@4V/Reverse Transfer Capacitance (Crss@Vds);125pF/Current - Continuous Drain(Id);5A/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input Capacitance;800pF


    N-Channel Array 20V 5A 1.25W Surface Mount SOT-23-6

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