Guangdong Hottech-Single FETs, MOSFETs-SI2309DS

Description

Drain to Source Voltage;60V/Gate Charge(Qg);2.7nC@4.5V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;1W/RDS(on);200mΩ@10V/Reverse Transfer Capacitance (Crss@Vds);15pF/Current - Continuous Drain(Id);2A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;310pF/Output Capacitance(Coss);28pF


P-Channel 60V 2A 1W Surface Mount SOT-23

Product form

Drain to Source Voltage;60V/Gate Charge(Qg);2.7nC@4.5V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;1W/RDS(on);200mΩ@10V/Reverse Transfer Capacitance (Crss@Vds);15pF/Current - Continuous Drain(Id);2A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;310pF/Output Capacitance(Coss);28pFP-Channel... Read more

$1.41 Excl. VAT

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    Description

    Drain to Source Voltage;60V/Gate Charge(Qg);2.7nC@4.5V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;1W/RDS(on);200mΩ@10V/Reverse Transfer Capacitance (Crss@Vds);15pF/Current - Continuous Drain(Id);2A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;310pF/Output Capacitance(Coss);28pF


    P-Channel 60V 2A 1W Surface Mount SOT-23

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