HL(Haolin Elec)-Single FETs, MOSFETs-HB3710P(EBD)

Description

Drain to Source Voltage;100V/Gate Charge(Qg);105nC@10V/Type;N-Channel/Pd - Power Dissipation;200W/RDS(on);20mΩ@10V/Current - Continuous Drain(Id);70A/Gate Threshold Voltage (Vgs(th));4V


100V 20mΩ@10V 200W TO-263 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;100V/Gate Charge(Qg);105nC@10V/Type;N-Channel/Pd - Power Dissipation;200W/RDS(on);20mΩ@10V/Current - Continuous Drain(Id);70A/Gate Threshold Voltage (Vgs(th));4V100V 20mΩ@10V 200W TO-263 Single FETs, MOSFETs... Read more

$45.00 Excl. VAT

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    Description

    Drain to Source Voltage;100V/Gate Charge(Qg);105nC@10V/Type;N-Channel/Pd - Power Dissipation;200W/RDS(on);20mΩ@10V/Current - Continuous Drain(Id);70A/Gate Threshold Voltage (Vgs(th));4V


    100V 20mΩ@10V 200W TO-263 Single FETs, MOSFETs RoHS

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