HL(Haolin Elec)-Single FETs, MOSFETs-HD100N02

Description

Drain to Source Voltage;20V/Gate Charge(Qg);32nC@4.5V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;87W/RDS(on);5.5mΩ@4.5V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);265pF/Current - Continuous Drain(Id);100A/Gate Threshold Voltage (Vgs(th));1.1V


20V 5.5mΩ@4.5V 1 N-channel 87W TO-252-2 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;20V/Gate Charge(Qg);32nC@4.5V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;87W/RDS(on);5.5mΩ@4.5V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);265pF/Current - Continuous Drain(Id);100A/Gate Threshold Voltage (Vgs(th));1.1V20V... Read more

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    Description

    Drain to Source Voltage;20V/Gate Charge(Qg);32nC@4.5V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;87W/RDS(on);5.5mΩ@4.5V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);265pF/Current - Continuous Drain(Id);100A/Gate Threshold Voltage (Vgs(th));1.1V


    20V 5.5mΩ@4.5V 1 N-channel 87W TO-252-2 Single FETs, MOSFETs RoHS

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