HL-Single FETs, MOSFETs-21N65RT

Description

Drain to Source Voltage;650V/Gate Charge(Qg);41nC@10V/Number;1 N-channel/Pd - Power Dissipation;245W/RDS(on);200mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);2pF/Current - Continuous Drain(Id);21A/Gate Threshold Voltage (Vgs(th));4.6V/Ciss-Input Capacitance;1.459nF/Output Capacitance(Coss);62pF


N-Channel 650V 21A 245W Through Hole TO-220

Product form

Drain to Source Voltage;650V/Gate Charge(Qg);41nC@10V/Number;1 N-channel/Pd - Power Dissipation;245W/RDS(on);200mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);2pF/Current - Continuous Drain(Id);21A/Gate Threshold Voltage (Vgs(th));4.6V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;650V/Gate Charge(Qg);41nC@10V/Number;1 N-channel/Pd - Power Dissipation;245W/RDS(on);200mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);2pF/Current - Continuous Drain(Id);21A/Gate Threshold Voltage (Vgs(th));4.6V/Ciss-Input Capacitance;1.459nF/Output Capacitance(Coss);62pF


    N-Channel 650V 21A 245W Through Hole TO-220

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