HL-Single FETs, MOSFETs-30P10M

Description

Drain to Source Voltage;30V/Gate Charge(Qg);48nC@4.5V/Number;1 P-Channel/Pd - Power Dissipation;5W/RDS(on);19mΩ/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);139pF/Current - Continuous Drain(Id);10A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;1.15nF


P-Channel 30V 10A 5W Surface Mount DFN2x2-6L

Product form

Drain to Source Voltage;30V/Gate Charge(Qg);48nC@4.5V/Number;1 P-Channel/Pd - Power Dissipation;5W/RDS(on);19mΩ/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);139pF/Current - Continuous Drain(Id);10A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;30V/Gate Charge(Qg);48nC@4.5V/Number;1 P-Channel/Pd - Power Dissipation;5W/RDS(on);19mΩ/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);139pF/Current - Continuous Drain(Id);10A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;1.15nF


    P-Channel 30V 10A 5W Surface Mount DFN2x2-6L

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