HL-Single FETs, MOSFETs-S110P06T

Description

Drain to Source Voltage;60V/Gate Charge(Qg);80.2nC@10V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;180W/RDS(on);7mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);48pF/Current - Continuous Drain(Id);110A/Gate Threshold Voltage (Vgs(th));2.4V/Ciss-Input Capacitance;5.403nF


P-Channel 60V 110A 180W Through Hole TO-220

Product form

Drain to Source Voltage;60V/Gate Charge(Qg);80.2nC@10V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;180W/RDS(on);7mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);48pF/Current - Continuous Drain(Id);110A/Gate Threshold Voltage (Vgs(th));2.4V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;60V/Gate Charge(Qg);80.2nC@10V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;180W/RDS(on);7mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);48pF/Current - Continuous Drain(Id);110A/Gate Threshold Voltage (Vgs(th));2.4V/Ciss-Input Capacitance;5.403nF


    P-Channel 60V 110A 180W Through Hole TO-220

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