HL-Single FETs, MOSFETs-S12N10

Description

Drain to Source Voltage;100V/Gate Charge(Qg);4.3nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;1W/RDS(on);140mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);21.4pF/Current - Continuous Drain(Id);12A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;196pF/Output Capacitance(Coss);25.9pF


N-Channel 100V 12A 1W Surface Mount TO-252

Product form

Drain to Source Voltage;100V/Gate Charge(Qg);4.3nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;1W/RDS(on);140mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);21.4pF/Current - Continuous Drain(Id);12A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;100V/Gate Charge(Qg);4.3nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;1W/RDS(on);140mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);21.4pF/Current - Continuous Drain(Id);12A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;196pF/Output Capacitance(Coss);25.9pF


    N-Channel 100V 12A 1W Surface Mount TO-252

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