HL-Single FETs, MOSFETs-S60N10

Description

Drain to Source Voltage;100V/Gate Charge(Qg);22.7nC@10V/Number;1 N-channel/Pd - Power Dissipation;67.5W/RDS(on);13.5mΩ/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);11.3pF/Current - Continuous Drain(Id);60A/Gate Threshold Voltage (Vgs(th));1.7V/Ciss-Input Capacitance;1.208nF


N-Channel 100V 60A 67.5W Surface Mount TO-252

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Drain to Source Voltage;100V/Gate Charge(Qg);22.7nC@10V/Number;1 N-channel/Pd - Power Dissipation;67.5W/RDS(on);13.5mΩ/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);11.3pF/Current - Continuous Drain(Id);60A/Gate Threshold Voltage (Vgs(th));1.7V/Ciss-Input... Read more

$3.51 Excl. VAT

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    Description

    Drain to Source Voltage;100V/Gate Charge(Qg);22.7nC@10V/Number;1 N-channel/Pd - Power Dissipation;67.5W/RDS(on);13.5mΩ/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);11.3pF/Current - Continuous Drain(Id);60A/Gate Threshold Voltage (Vgs(th));1.7V/Ciss-Input Capacitance;1.208nF


    N-Channel 100V 60A 67.5W Surface Mount TO-252

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