HUAKE-Single FETs, MOSFETs-HCD65R1K0

Description

Drain to Source Voltage;650V/Gate Charge(Qg);10.2nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;61W/RDS(on);1Ω@10V/Reverse Transfer Capacitance (Crss@Vds);9.2pF/Current - Continuous Drain(Id);4A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;330pF


N-Channel 650V 4A 61W Surface Mount TO-252

Product form

Drain to Source Voltage;650V/Gate Charge(Qg);10.2nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;61W/RDS(on);1Ω@10V/Reverse Transfer Capacitance (Crss@Vds);9.2pF/Current - Continuous Drain(Id);4A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;330pFN-Channel 650V... Read more

$4.86 Excl. VAT

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    Description

    Drain to Source Voltage;650V/Gate Charge(Qg);10.2nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;61W/RDS(on);1Ω@10V/Reverse Transfer Capacitance (Crss@Vds);9.2pF/Current - Continuous Drain(Id);4A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;330pF


    N-Channel 650V 4A 61W Surface Mount TO-252

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