HUAKE-Single FETs, MOSFETs-HCD65R280-S2

Description

Drain to Source Voltage;650V/Gate Charge(Qg);27nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;115W/RDS(on);240mΩ@10V/Reverse Transfer Capacitance (Crss@Vds);1pF/Current - Continuous Drain(Id);15A/Gate Threshold Voltage (Vgs(th));4.5V/Ciss-Input Capacitance;920pF/Output Capacitance(Coss);41pF


650V 240mΩ@10V 1 N-channel 115W TO-252 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;650V/Gate Charge(Qg);27nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;115W/RDS(on);240mΩ@10V/Reverse Transfer Capacitance (Crss@Vds);1pF/Current - Continuous Drain(Id);15A/Gate Threshold Voltage (Vgs(th));4.5V/Ciss-Input Capacitance;920pF/Output Capacitance(Coss);41pF650V... Read more

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    Description

    Drain to Source Voltage;650V/Gate Charge(Qg);27nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;115W/RDS(on);240mΩ@10V/Reverse Transfer Capacitance (Crss@Vds);1pF/Current - Continuous Drain(Id);15A/Gate Threshold Voltage (Vgs(th));4.5V/Ciss-Input Capacitance;920pF/Output Capacitance(Coss);41pF


    650V 240mΩ@10V 1 N-channel 115W TO-252 Single FETs, MOSFETs RoHS

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