HUAKE-Single FETs, MOSFETs-HCD65R360

Description

Drain to Source Voltage;650V/Gate Charge(Qg);23.1nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;91W/RDS(on);400mΩ@10V/Reverse Transfer Capacitance (Crss@Vds);40pF/Current - Continuous Drain(Id);11A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;615pF/Output Capacitance(Coss);270pF


N-Channel 650V 11A 91W Surface Mount TO-252

Product form

Drain to Source Voltage;650V/Gate Charge(Qg);23.1nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;91W/RDS(on);400mΩ@10V/Reverse Transfer Capacitance (Crss@Vds);40pF/Current - Continuous Drain(Id);11A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;615pF/Output Capacitance(Coss);270pFN-Channel... Read more

$1.71 Excl. VAT

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    Description

    Drain to Source Voltage;650V/Gate Charge(Qg);23.1nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;91W/RDS(on);400mΩ@10V/Reverse Transfer Capacitance (Crss@Vds);40pF/Current - Continuous Drain(Id);11A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;615pF/Output Capacitance(Coss);270pF


    N-Channel 650V 11A 91W Surface Mount TO-252

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