HUAKE-Single FETs, MOSFETs-HCF65R180

Description

Drain to Source Voltage;650V/Gate Charge(Qg);39nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;54W/RDS(on);210mΩ@10V/Reverse Transfer Capacitance (Crss@Vds);4pF/Current - Continuous Drain(Id);20A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;1.17nF


N-Channel 650V 20A 54W Through Hole TO-220F

Product form

Drain to Source Voltage;650V/Gate Charge(Qg);39nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;54W/RDS(on);210mΩ@10V/Reverse Transfer Capacitance (Crss@Vds);4pF/Current - Continuous Drain(Id);20A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;1.17nFN-Channel 650V... Read more

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    Description

    Drain to Source Voltage;650V/Gate Charge(Qg);39nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;54W/RDS(on);210mΩ@10V/Reverse Transfer Capacitance (Crss@Vds);4pF/Current - Continuous Drain(Id);20A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;1.17nF


    N-Channel 650V 20A 54W Through Hole TO-220F

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