HUAKE-Single FETs, MOSFETs-HST503

Description

Drain to Source Voltage;100V/Gate Charge(Qg);114nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;220W/RDS(on);4.5mΩ@10V/Reverse Transfer Capacitance (Crss@Vds);24pF/Current - Continuous Drain(Id);172A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;7.26nF/Output Capacitance(Coss);860pF


N-Channel 100V 172A 220W Through Hole TO-220C

Product form

Drain to Source Voltage;100V/Gate Charge(Qg);114nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;220W/RDS(on);4.5mΩ@10V/Reverse Transfer Capacitance (Crss@Vds);24pF/Current - Continuous Drain(Id);172A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;7.26nF/Output Capacitance(Coss);860pFN-Channel... Read more

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    Description

    Drain to Source Voltage;100V/Gate Charge(Qg);114nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;220W/RDS(on);4.5mΩ@10V/Reverse Transfer Capacitance (Crss@Vds);24pF/Current - Continuous Drain(Id);172A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;7.26nF/Output Capacitance(Coss);860pF


    N-Channel 100V 172A 220W Through Hole TO-220C

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