HUAKE-Single FETs, MOSFETs-SMD2N65

Description

Drain to Source Voltage;650V/Gate Charge(Qg);9nC@10V/Number;1 N-channel/Pd - Power Dissipation;44W/RDS(on);4.5Ω@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);5pF/Current - Continuous Drain(Id);2A/Gate Threshold Voltage (Vgs(th));2V/Ciss-Input Capacitance;270pF


N-Channel 650V 2A 44W Surface Mount TO-252

Product form

Drain to Source Voltage;650V/Gate Charge(Qg);9nC@10V/Number;1 N-channel/Pd - Power Dissipation;44W/RDS(on);4.5Ω@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);5pF/Current - Continuous Drain(Id);2A/Gate Threshold Voltage (Vgs(th));2V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;650V/Gate Charge(Qg);9nC@10V/Number;1 N-channel/Pd - Power Dissipation;44W/RDS(on);4.5Ω@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);5pF/Current - Continuous Drain(Id);2A/Gate Threshold Voltage (Vgs(th));2V/Ciss-Input Capacitance;270pF


    N-Channel 650V 2A 44W Surface Mount TO-252

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