HUAKE-Single FETs, MOSFETs-SMF8N65

Description

Drain to Source Voltage;650V/Number;1 N-channel/Pd - Power Dissipation;51W/RDS(on);1.1Ω@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);16pF/Current - Continuous Drain(Id);8A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;1.4nF


N-Channel 650V 8A 51W Through Hole TO-220F

Product form

Drain to Source Voltage;650V/Number;1 N-channel/Pd - Power Dissipation;51W/RDS(on);1.1Ω@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);16pF/Current - Continuous Drain(Id);8A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;1.4nFN-Channel... Read more

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    Description

    Drain to Source Voltage;650V/Number;1 N-channel/Pd - Power Dissipation;51W/RDS(on);1.1Ω@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);16pF/Current - Continuous Drain(Id);8A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;1.4nF


    N-Channel 650V 8A 51W Through Hole TO-220F

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