HUAKE-Single FETs, MOSFETs-SMT20N60

Description

Drain to Source Voltage;600V/Gate Charge(Qg);55.2nC@10V/Number;1 N-channel/Pd - Power Dissipation;265W/RDS(on);350mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);9pF/Current - Continuous Drain(Id);20A/Gate Threshold Voltage (Vgs(th));2V/Ciss-Input Capacitance;3.05nF


N-Channel 600V 20A 265W Through Hole TO-220C

Product form

Drain to Source Voltage;600V/Gate Charge(Qg);55.2nC@10V/Number;1 N-channel/Pd - Power Dissipation;265W/RDS(on);350mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);9pF/Current - Continuous Drain(Id);20A/Gate Threshold Voltage (Vgs(th));2V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;600V/Gate Charge(Qg);55.2nC@10V/Number;1 N-channel/Pd - Power Dissipation;265W/RDS(on);350mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);9pF/Current - Continuous Drain(Id);20A/Gate Threshold Voltage (Vgs(th));2V/Ciss-Input Capacitance;3.05nF


    N-Channel 600V 20A 265W Through Hole TO-220C

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