HUAKE-Single FETs, MOSFETs-SMT8N60

Description

Drain to Source Voltage;600V/Gate Charge(Qg);31nC@10V/Number;1 N-channel/Pd - Power Dissipation;116W/RDS(on);1Ω@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);16pF/Current - Continuous Drain(Id);8A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;1.4nF


N-Channel 600V 8A 116W Through Hole TO-220F-3

Product form

Drain to Source Voltage;600V/Gate Charge(Qg);31nC@10V/Number;1 N-channel/Pd - Power Dissipation;116W/RDS(on);1Ω@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);16pF/Current - Continuous Drain(Id);8A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;600V/Gate Charge(Qg);31nC@10V/Number;1 N-channel/Pd - Power Dissipation;116W/RDS(on);1Ω@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);16pF/Current - Continuous Drain(Id);8A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;1.4nF


    N-Channel 600V 8A 116W Through Hole TO-220F-3

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