HUASHUO-Single FETs, MOSFETs-AO3415

Description

Drain to Source Voltage;20V/Gate Charge(Qg);11nC@4.5V/Number;1 P-Channel/Pd - Power Dissipation;1.25W/RDS(on);45mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);205pF/Current - Continuous Drain(Id);4.3A/Gate Threshold Voltage (Vgs(th));450mV/Ciss-Input Capacitance;900pF


P-Channel 20V 4.3A 1.25W Surface Mount SOT-23L

Product form

Drain to Source Voltage;20V/Gate Charge(Qg);11nC@4.5V/Number;1 P-Channel/Pd - Power Dissipation;1.25W/RDS(on);45mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);205pF/Current - Continuous Drain(Id);4.3A/Gate Threshold Voltage (Vgs(th));450mV/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;20V/Gate Charge(Qg);11nC@4.5V/Number;1 P-Channel/Pd - Power Dissipation;1.25W/RDS(on);45mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);205pF/Current - Continuous Drain(Id);4.3A/Gate Threshold Voltage (Vgs(th));450mV/Ciss-Input Capacitance;900pF


    P-Channel 20V 4.3A 1.25W Surface Mount SOT-23L

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