HUASHUO-Single FETs, MOSFETs-BSS84

Description

Drain to Source Voltage;60V/Gate Charge(Qg);1.8nC@4.5V/Number;1 P-Channel/Pd - Power Dissipation;350mW/RDS(on);6Ω@4.5V/Operating Temperature -;-40℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);9pF/Current - Continuous Drain(Id);300mA/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;170pF


P-Channel 60V 0.3A 0.35W Surface Mount SOT-23

Product form

Drain to Source Voltage;60V/Gate Charge(Qg);1.8nC@4.5V/Number;1 P-Channel/Pd - Power Dissipation;350mW/RDS(on);6Ω@4.5V/Operating Temperature -;-40℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);9pF/Current - Continuous Drain(Id);300mA/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;60V/Gate Charge(Qg);1.8nC@4.5V/Number;1 P-Channel/Pd - Power Dissipation;350mW/RDS(on);6Ω@4.5V/Operating Temperature -;-40℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);9pF/Current - Continuous Drain(Id);300mA/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;170pF


    P-Channel 60V 0.3A 0.35W Surface Mount SOT-23

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