HUASHUO-Single FETs, MOSFETs-HSBA0119

Description

Drain to Source Voltage;100V/Gate Charge(Qg);38nC@10V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;68W/RDS(on);23mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);240pF/Current - Continuous Drain(Id);33A/Gate Threshold Voltage (Vgs(th));1.7V/Ciss-Input Capacitance;13.25nF/Output Capacitance(Coss);265pF


100V 23mΩ@10V 1 P-Channel 68W PRPAK-8(5x6) Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;100V/Gate Charge(Qg);38nC@10V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;68W/RDS(on);23mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);240pF/Current - Continuous Drain(Id);33A/Gate Threshold Voltage (Vgs(th));1.7V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;100V/Gate Charge(Qg);38nC@10V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;68W/RDS(on);23mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);240pF/Current - Continuous Drain(Id);33A/Gate Threshold Voltage (Vgs(th));1.7V/Ciss-Input Capacitance;13.25nF/Output Capacitance(Coss);265pF


    100V 23mΩ@10V 1 P-Channel 68W PRPAK-8(5x6) Single FETs, MOSFETs RoHS

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