HUASHUO-Single FETs, MOSFETs-HSBA0256

Description

Drain to Source Voltage;100V/Gate Charge(Qg);18nC@10V/Number;2 N-Channel/Type;N-Channel/Pd - Power Dissipation;30W/RDS(on);20mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);8pF/Current - Continuous Drain(Id);30A/Gate Threshold Voltage (Vgs(th));2.2V/Ciss-Input Capacitance;851pF/Output Capacitance(Coss);165pF


N-Channel Array 100V 30A 30W PRPAK5x6-8L

Product form

Drain to Source Voltage;100V/Gate Charge(Qg);18nC@10V/Number;2 N-Channel/Type;N-Channel/Pd - Power Dissipation;30W/RDS(on);20mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);8pF/Current - Continuous Drain(Id);30A/Gate Threshold Voltage (Vgs(th));2.2V/Ciss-Input... Read more

$1.59 Excl. VAT

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    Description

    Drain to Source Voltage;100V/Gate Charge(Qg);18nC@10V/Number;2 N-Channel/Type;N-Channel/Pd - Power Dissipation;30W/RDS(on);20mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);8pF/Current - Continuous Drain(Id);30A/Gate Threshold Voltage (Vgs(th));2.2V/Ciss-Input Capacitance;851pF/Output Capacitance(Coss);165pF


    N-Channel Array 100V 30A 30W PRPAK5x6-8L

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