HUASHUO-Single FETs, MOSFETs-HSBA060N10

Description

Drain to Source Voltage;100V/Gate Charge(Qg);60nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;89W/RDS(on);6mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);20pF/Current - Continuous Drain(Id);86A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;3.01nF/Output Capacitance(Coss);539pF


N-Channel 100V 86A 89W PRPAK5x6-8L

Product form

Drain to Source Voltage;100V/Gate Charge(Qg);60nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;89W/RDS(on);6mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);20pF/Current - Continuous Drain(Id);86A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input... Read more

$2.76 Excl. VAT

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    Description

    Drain to Source Voltage;100V/Gate Charge(Qg);60nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;89W/RDS(on);6mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);20pF/Current - Continuous Drain(Id);86A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;3.01nF/Output Capacitance(Coss);539pF


    N-Channel 100V 86A 89W PRPAK5x6-8L

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