HUASHUO-Single FETs, MOSFETs-HSBA20N15S

Description

Drain to Source Voltage;150V/Gate Charge(Qg);19nC@4.5V/Number;1 N-channel/Pd - Power Dissipation;72.6W/RDS(on);56mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);6pF/Current - Continuous Drain(Id);23A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;1.09nF


N-Channel 150V 23A 72.6W PRPAK5x6-8L

Product form

Drain to Source Voltage;150V/Gate Charge(Qg);19nC@4.5V/Number;1 N-channel/Pd - Power Dissipation;72.6W/RDS(on);56mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);6pF/Current - Continuous Drain(Id);23A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;150V/Gate Charge(Qg);19nC@4.5V/Number;1 N-channel/Pd - Power Dissipation;72.6W/RDS(on);56mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);6pF/Current - Continuous Drain(Id);23A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;1.09nF


    N-Channel 150V 23A 72.6W PRPAK5x6-8L

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