HUASHUO-Single FETs, MOSFETs-HSBA3014

Description

Drain to Source Voltage;30V/Gate Charge(Qg);9.82nC@4.5V/Number;1 N-channel/Pd - Power Dissipation;41.7W/RDS(on);12mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);108pF/Current - Continuous Drain(Id);50A/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input Capacitance;940pF


30V 12mΩ@10V 1 N-channel 41.7W PRPAK(5x6) Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;30V/Gate Charge(Qg);9.82nC@4.5V/Number;1 N-channel/Pd - Power Dissipation;41.7W/RDS(on);12mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);108pF/Current - Continuous Drain(Id);50A/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input... Read more

$3.30 Excl. VAT

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    Description

    Drain to Source Voltage;30V/Gate Charge(Qg);9.82nC@4.5V/Number;1 N-channel/Pd - Power Dissipation;41.7W/RDS(on);12mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);108pF/Current - Continuous Drain(Id);50A/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input Capacitance;940pF


    30V 12mΩ@10V 1 N-channel 41.7W PRPAK(5x6) Single FETs, MOSFETs RoHS

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