HUASHUO-Single FETs, MOSFETs-HSBA3052

Description

Drain to Source Voltage;30V/Gate Charge(Qg);8nC@4.5V/Number;1 N-channel/Pd - Power Dissipation;24W/RDS(on);6.9mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);41pF/Current - Continuous Drain(Id);52A/Gate Threshold Voltage (Vgs(th));1.2V/Ciss-Input Capacitance;814pF


N-Channel 30V 52A 24W PRPAK5x6-8L

Product form

Drain to Source Voltage;30V/Gate Charge(Qg);8nC@4.5V/Number;1 N-channel/Pd - Power Dissipation;24W/RDS(on);6.9mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);41pF/Current - Continuous Drain(Id);52A/Gate Threshold Voltage (Vgs(th));1.2V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;30V/Gate Charge(Qg);8nC@4.5V/Number;1 N-channel/Pd - Power Dissipation;24W/RDS(on);6.9mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);41pF/Current - Continuous Drain(Id);52A/Gate Threshold Voltage (Vgs(th));1.2V/Ciss-Input Capacitance;814pF


    N-Channel 30V 52A 24W PRPAK5x6-8L

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