HUASHUO-Single FETs, MOSFETs-HSBA3056
- HUASHUO
Drain to Source Voltage;30V/Gate Charge(Qg);14.6nC@4.5V/Number;1 N-channel/Pd - Power Dissipation;38W/RDS(on);3.9mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);70pF/Current - Continuous Drain(Id);73A/Gate Threshold Voltage (Vgs(th));1.7V/Ciss-Input... Read more
$4.59 Excl. VAT
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