HUASHUO-Single FETs, MOSFETs-HSBA3060

Description

Drain to Source Voltage;30V/Number;1 N-channel/Pd - Power Dissipation;31W/RDS(on);9.8mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);28pF/Current - Continuous Drain(Id);48A/Gate Threshold Voltage (Vgs(th));1.3V/Ciss-Input Capacitance;562pF


N-Channel 30V 48A 31W PRPAK5x6-8L

Product form

Drain to Source Voltage;30V/Number;1 N-channel/Pd - Power Dissipation;31W/RDS(on);9.8mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);28pF/Current - Continuous Drain(Id);48A/Gate Threshold Voltage (Vgs(th));1.3V/Ciss-Input Capacitance;562pFN-Channel... Read more

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    Description

    Drain to Source Voltage;30V/Number;1 N-channel/Pd - Power Dissipation;31W/RDS(on);9.8mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);28pF/Current - Continuous Drain(Id);48A/Gate Threshold Voltage (Vgs(th));1.3V/Ciss-Input Capacitance;562pF


    N-Channel 30V 48A 31W PRPAK5x6-8L

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