HUASHUO-Single FETs, MOSFETs-HSBA3072

Description

Drain to Source Voltage;30V/Gate Charge(Qg);26nC@4.5V/Number;1 N-channel/Pd - Power Dissipation;50W/RDS(on);1.6mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);229pF/Current - Continuous Drain(Id);120A/Gate Threshold Voltage (Vgs(th));1.7V/Ciss-Input Capacitance;2.86nF


N-Channel 30V 120A 50W PRPAK5x6-8L

Product form

Drain to Source Voltage;30V/Gate Charge(Qg);26nC@4.5V/Number;1 N-channel/Pd - Power Dissipation;50W/RDS(on);1.6mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);229pF/Current - Continuous Drain(Id);120A/Gate Threshold Voltage (Vgs(th));1.7V/Ciss-Input... Read more

$4.74 Excl. VAT

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    Description

    Drain to Source Voltage;30V/Gate Charge(Qg);26nC@4.5V/Number;1 N-channel/Pd - Power Dissipation;50W/RDS(on);1.6mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);229pF/Current - Continuous Drain(Id);120A/Gate Threshold Voltage (Vgs(th));1.7V/Ciss-Input Capacitance;2.86nF


    N-Channel 30V 120A 50W PRPAK5x6-8L

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