HUASHUO-Single FETs, MOSFETs-HSBA3072C

Description

Drain to Source Voltage;30V/Gate Charge(Qg);26nC@4.5V/Number;1 N-channel/Pd - Power Dissipation;55W/RDS(on);1.2mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);229pF/Current - Continuous Drain(Id);150A/Gate Threshold Voltage (Vgs(th));1.7V/Ciss-Input Capacitance;2.86nF/Output Capacitance(Coss);1.3nF


30V 1.2mΩ@10V 1 N-channel 55W PRPAK-8(5x6) Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;30V/Gate Charge(Qg);26nC@4.5V/Number;1 N-channel/Pd - Power Dissipation;55W/RDS(on);1.2mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);229pF/Current - Continuous Drain(Id);150A/Gate Threshold Voltage (Vgs(th));1.7V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;30V/Gate Charge(Qg);26nC@4.5V/Number;1 N-channel/Pd - Power Dissipation;55W/RDS(on);1.2mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);229pF/Current - Continuous Drain(Id);150A/Gate Threshold Voltage (Vgs(th));1.7V/Ciss-Input Capacitance;2.86nF/Output Capacitance(Coss);1.3nF


    30V 1.2mΩ@10V 1 N-channel 55W PRPAK-8(5x6) Single FETs, MOSFETs RoHS

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