HUASHUO-Single FETs, MOSFETs-HSBA3094

Description

Drain to Source Voltage;30V/Gate Charge(Qg);21nC@4.5V/Number;1 N-channel/Pd - Power Dissipation;48W/RDS(on);1.8mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);207pF/Current - Continuous Drain(Id);85A/Gate Threshold Voltage (Vgs(th));1.6V/Ciss-Input Capacitance;3.032nF


N-Channel 30V 85A 48W PRPAK5x6-8L

Product form

Drain to Source Voltage;30V/Gate Charge(Qg);21nC@4.5V/Number;1 N-channel/Pd - Power Dissipation;48W/RDS(on);1.8mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);207pF/Current - Continuous Drain(Id);85A/Gate Threshold Voltage (Vgs(th));1.6V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;30V/Gate Charge(Qg);21nC@4.5V/Number;1 N-channel/Pd - Power Dissipation;48W/RDS(on);1.8mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);207pF/Current - Continuous Drain(Id);85A/Gate Threshold Voltage (Vgs(th));1.6V/Ciss-Input Capacitance;3.032nF


    N-Channel 30V 85A 48W PRPAK5x6-8L

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