HUASHUO-Single FETs, MOSFETs-HSBA30N20
- HUASHUO
Drain to Source Voltage;200V/Gate Charge(Qg);49nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;150W/RDS(on);48mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);86pF/Current - Continuous Drain(Id);30A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input... Read more
$1.59 Excl. VAT
-
Guaranteed secure & safe checkout.