HUASHUO-Single FETs, MOSFETs-HSBA3105
- HUASHUO
Drain to Source Voltage;30V/Gate Charge(Qg);22nC@4.5V/Number;1 P-Channel/Pd - Power Dissipation;45W/RDS(on);15mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);237pF/Current - Continuous Drain(Id);45A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input... Read more
$3.36 Excl. VAT
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