HUASHUO-Single FETs, MOSFETs-HSBA3202

Description

Drain to Source Voltage;30V/Gate Charge(Qg);4.5nC@4.5V/Number;2 N-Channel/Pd - Power Dissipation;42W/RDS(on);15mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);57pF/Current - Continuous Drain(Id);35A/Gate Threshold Voltage (Vgs(th));2.3V/Ciss-Input Capacitance;491pF


N-Channel Array 30V 35A 42W PRPAK5x6-8L

Product form

Drain to Source Voltage;30V/Gate Charge(Qg);4.5nC@4.5V/Number;2 N-Channel/Pd - Power Dissipation;42W/RDS(on);15mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);57pF/Current - Continuous Drain(Id);35A/Gate Threshold Voltage (Vgs(th));2.3V/Ciss-Input... Read more

$1.59 Excl. VAT

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    Description

    Drain to Source Voltage;30V/Gate Charge(Qg);4.5nC@4.5V/Number;2 N-Channel/Pd - Power Dissipation;42W/RDS(on);15mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);57pF/Current - Continuous Drain(Id);35A/Gate Threshold Voltage (Vgs(th));2.3V/Ciss-Input Capacitance;491pF


    N-Channel Array 30V 35A 42W PRPAK5x6-8L

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