HUASHUO-Single FETs, MOSFETs-HSBA3480

Description

Drain to Source Voltage;30V/Gate Charge(Qg);4.8nC@10V;18nC@10V/Number;2 N-Channel/Type;N-Channel/Pd - Power Dissipation;26W;34W/RDS(on);6.5mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);30pF/Configuration;Half-Bridge/Current - Continuous Drain(Id);40A;65A/Gate Threshold Voltage (Vgs(th));1.8V/Ciss-Input Capacitance;575pF;891pF/Output Capacitance(Coss);265pF;368pF


30V 6.5mΩ@10V 2 N-Channel PRPAK-8(5x6) Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;30V/Gate Charge(Qg);4.8nC@10V;18nC@10V/Number;2 N-Channel/Type;N-Channel/Pd - Power Dissipation;26W;34W/RDS(on);6.5mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);30pF/Configuration;Half-Bridge/Current - Continuous Drain(Id);40A;65A/Gate Threshold Voltage (Vgs(th));1.8V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;30V/Gate Charge(Qg);4.8nC@10V;18nC@10V/Number;2 N-Channel/Type;N-Channel/Pd - Power Dissipation;26W;34W/RDS(on);6.5mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);30pF/Configuration;Half-Bridge/Current - Continuous Drain(Id);40A;65A/Gate Threshold Voltage (Vgs(th));1.8V/Ciss-Input Capacitance;575pF;891pF/Output Capacitance(Coss);265pF;368pF


    30V 6.5mΩ@10V 2 N-Channel PRPAK-8(5x6) Single FETs, MOSFETs RoHS

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