HUASHUO-Single FETs, MOSFETs-HSBA3482

Description

Drain to Source Voltage;30V/Gate Charge(Qg);8.5nC@4.5V;26.1nC@4.5V/Number;2 N-Channel/Type;N-Channel/Pd - Power Dissipation;25W;35W/RDS(on);4mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);65pF/Configuration;Half-Bridge/Current - Continuous Drain(Id);58A;99A/Gate Threshold Voltage (Vgs(th));1.7V/Ciss-Input Capacitance;882pF;2.859nF/Output Capacitance(Coss);380pF;1.259nF


30V 4mΩ@10V 2 N-Channel PRPAK-8(5x6) Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;30V/Gate Charge(Qg);8.5nC@4.5V;26.1nC@4.5V/Number;2 N-Channel/Type;N-Channel/Pd - Power Dissipation;25W;35W/RDS(on);4mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);65pF/Configuration;Half-Bridge/Current - Continuous Drain(Id);58A;99A/Gate Threshold Voltage (Vgs(th));1.7V/Ciss-Input... Read more

$1.74 Excl. VAT

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    Description

    Drain to Source Voltage;30V/Gate Charge(Qg);8.5nC@4.5V;26.1nC@4.5V/Number;2 N-Channel/Type;N-Channel/Pd - Power Dissipation;25W;35W/RDS(on);4mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);65pF/Configuration;Half-Bridge/Current - Continuous Drain(Id);58A;99A/Gate Threshold Voltage (Vgs(th));1.7V/Ciss-Input Capacitance;882pF;2.859nF/Output Capacitance(Coss);380pF;1.259nF


    30V 4mΩ@10V 2 N-Channel PRPAK-8(5x6) Single FETs, MOSFETs RoHS

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