HUASHUO-Single FETs, MOSFETs-HSBA3482
- HUASHUO
Drain to Source Voltage;30V/Gate Charge(Qg);8.5nC@4.5V;26.1nC@4.5V/Number;2 N-Channel/Type;N-Channel/Pd - Power Dissipation;25W;35W/RDS(on);4mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);65pF/Configuration;Half-Bridge/Current - Continuous Drain(Id);58A;99A/Gate Threshold Voltage (Vgs(th));1.7V/Ciss-Input... Read more
$1.74 Excl. VAT
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