HUASHUO-Single FETs, MOSFETs-HSBA35P15
- HUASHUO
Drain to Source Voltage;150V/Gate Charge(Qg);120nC@10V/Number;1 P-Channel/Pd - Power Dissipation;80W/RDS(on);85mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);116pF/Current - Continuous Drain(Id);35A/Gate Threshold Voltage (Vgs(th));1.65V/Ciss-Input... Read more
$2.13 Excl. VAT
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