HUASHUO-Single FETs, MOSFETs-HSBA4048

Description

Drain to Source Voltage;40V/Gate Charge(Qg);45nC@4.5V/Number;1 N-channel/Pd - Power Dissipation;125W/RDS(on);1.8mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);82pF/Current - Continuous Drain(Id);100A/Gate Threshold Voltage (Vgs(th));1.6V/Ciss-Input Capacitance;3.972nF


N-Channel 40V 100A 125W PRPAK5x6-8L

Product form

Drain to Source Voltage;40V/Gate Charge(Qg);45nC@4.5V/Number;1 N-channel/Pd - Power Dissipation;125W/RDS(on);1.8mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);82pF/Current - Continuous Drain(Id);100A/Gate Threshold Voltage (Vgs(th));1.6V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;40V/Gate Charge(Qg);45nC@4.5V/Number;1 N-channel/Pd - Power Dissipation;125W/RDS(on);1.8mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);82pF/Current - Continuous Drain(Id);100A/Gate Threshold Voltage (Vgs(th));1.6V/Ciss-Input Capacitance;3.972nF


    N-Channel 40V 100A 125W PRPAK5x6-8L

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