HUASHUO-Single FETs, MOSFETs-HSBA4115

Description

Drain to Source Voltage;40V/Gate Charge(Qg);27.9nC@4.5V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;52.1W/RDS(on);13mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);222pF/Current - Continuous Drain(Id);52A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;3.5nF/Output Capacitance(Coss);323pF


P-Channel 40V 52A 52.1W PRPAK5x6-8L

Product form

Drain to Source Voltage;40V/Gate Charge(Qg);27.9nC@4.5V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;52.1W/RDS(on);13mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);222pF/Current - Continuous Drain(Id);52A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input... Read more

$4.65 Excl. VAT

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    Description

    Drain to Source Voltage;40V/Gate Charge(Qg);27.9nC@4.5V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;52.1W/RDS(on);13mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);222pF/Current - Continuous Drain(Id);52A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;3.5nF/Output Capacitance(Coss);323pF


    P-Channel 40V 52A 52.1W PRPAK5x6-8L

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