HUASHUO-Single FETs, MOSFETs-HSBA6048

Description

Drain to Source Voltage;60V/Gate Charge(Qg);58nC@10V/Number;1 N-channel/Pd - Power Dissipation;83W/RDS(on);3.6mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);22pF/Current - Continuous Drain(Id);85A/Gate Threshold Voltage (Vgs(th));2.3V/Ciss-Input Capacitance;3.458nF


N-Channel 60V 85A 83W PRPAK5x6-8L

Product form

Drain to Source Voltage;60V/Gate Charge(Qg);58nC@10V/Number;1 N-channel/Pd - Power Dissipation;83W/RDS(on);3.6mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);22pF/Current - Continuous Drain(Id);85A/Gate Threshold Voltage (Vgs(th));2.3V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;60V/Gate Charge(Qg);58nC@10V/Number;1 N-channel/Pd - Power Dissipation;83W/RDS(on);3.6mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);22pF/Current - Continuous Drain(Id);85A/Gate Threshold Voltage (Vgs(th));2.3V/Ciss-Input Capacitance;3.458nF


    N-Channel 60V 85A 83W PRPAK5x6-8L

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