HUASHUO-Single FETs, MOSFETs-HSBA6076

Description

Drain to Source Voltage;60V/Gate Charge(Qg);105nC@10V/Number;1 N-channel/Pd - Power Dissipation;110W/RDS(on);1.6mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);28pF/Current - Continuous Drain(Id);150A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;5.98nF


N-Channel 60V 150A 110W PRPAK5x6-8

Product form

Drain to Source Voltage;60V/Gate Charge(Qg);105nC@10V/Number;1 N-channel/Pd - Power Dissipation;110W/RDS(on);1.6mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);28pF/Current - Continuous Drain(Id);150A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input... Read more

$1.89 Excl. VAT

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    Description

    Drain to Source Voltage;60V/Gate Charge(Qg);105nC@10V/Number;1 N-channel/Pd - Power Dissipation;110W/RDS(on);1.6mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);28pF/Current - Continuous Drain(Id);150A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;5.98nF


    N-Channel 60V 150A 110W PRPAK5x6-8

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