HUASHUO-Single FETs, MOSFETs-HSBA6256
- HUASHUO
Drain to Source Voltage;60V/Gate Charge(Qg);15nC@10V/Number;2 N-Channel/Type;N-Channel/Pd - Power Dissipation;50W/RDS(on);10mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);40pF/Current - Continuous Drain(Id);50A/Gate Threshold Voltage (Vgs(th));2.3V/Ciss-Input... Read more
$0.87 Excl. VAT
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