HUASHUO-Single FETs, MOSFETs-HSBA6256

Description

Drain to Source Voltage;60V/Gate Charge(Qg);15nC@10V/Number;2 N-Channel/Type;N-Channel/Pd - Power Dissipation;50W/RDS(on);10mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);40pF/Current - Continuous Drain(Id);50A/Gate Threshold Voltage (Vgs(th));2.3V/Ciss-Input Capacitance;1.27nF/Output Capacitance(Coss);478pF


N-Channel Array 60V 50A 50W Surface Mount PRPAK5x6-8L

Product form

Drain to Source Voltage;60V/Gate Charge(Qg);15nC@10V/Number;2 N-Channel/Type;N-Channel/Pd - Power Dissipation;50W/RDS(on);10mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);40pF/Current - Continuous Drain(Id);50A/Gate Threshold Voltage (Vgs(th));2.3V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;60V/Gate Charge(Qg);15nC@10V/Number;2 N-Channel/Type;N-Channel/Pd - Power Dissipation;50W/RDS(on);10mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);40pF/Current - Continuous Drain(Id);50A/Gate Threshold Voltage (Vgs(th));2.3V/Ciss-Input Capacitance;1.27nF/Output Capacitance(Coss);478pF


    N-Channel Array 60V 50A 50W Surface Mount PRPAK5x6-8L

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