HUASHUO-Single FETs, MOSFETs-HSBA6566A

Description

Drain to Source Voltage;65V/Gate Charge(Qg);26.5nC@10V/Number;1 N-channel/Pd - Power Dissipation;52W/RDS(on);6.2mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);43pF/Current - Continuous Drain(Id);65A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;1.67nF


N-Channel 65V 65A 52W PRPAK5x6-8L

Product form

Drain to Source Voltage;65V/Gate Charge(Qg);26.5nC@10V/Number;1 N-channel/Pd - Power Dissipation;52W/RDS(on);6.2mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);43pF/Current - Continuous Drain(Id);65A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;65V/Gate Charge(Qg);26.5nC@10V/Number;1 N-channel/Pd - Power Dissipation;52W/RDS(on);6.2mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);43pF/Current - Continuous Drain(Id);65A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;1.67nF


    N-Channel 65V 65A 52W PRPAK5x6-8L

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