HUASHUO-Single FETs, MOSFETs-HSBA90N12
- HUASHUO
Drain to Source Voltage;120V/Gate Charge(Qg);39nC@4.5V/Number;1 N-channel/Pd - Power Dissipation;125W/RDS(on);6.5mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);17pF/Current - Continuous Drain(Id);90A/Gate Threshold Voltage (Vgs(th));2.2V/Ciss-Input... Read more
$2.94 Excl. VAT
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