HUASHUO-Single FETs, MOSFETs-HSBB0012
- HUASHUO
Drain to Source Voltage;100V/Gate Charge(Qg);5.4nC@10V/Number;1 N-channel/Pd - Power Dissipation;21W/RDS(on);105mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);3.7pF/Current - Continuous Drain(Id);20A/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input... Read more
$2.55 Excl. VAT
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