HUASHUO-Single FETs, MOSFETs-HSBB0012

Description

Drain to Source Voltage;100V/Gate Charge(Qg);5.4nC@10V/Number;1 N-channel/Pd - Power Dissipation;21W/RDS(on);105mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);3.7pF/Current - Continuous Drain(Id);20A/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input Capacitance;310pF


N-Channel 100V 20A 21W PRPAK3x3-8L

Product form

Drain to Source Voltage;100V/Gate Charge(Qg);5.4nC@10V/Number;1 N-channel/Pd - Power Dissipation;21W/RDS(on);105mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);3.7pF/Current - Continuous Drain(Id);20A/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input... Read more

$2.55 Excl. VAT

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    Description

    Drain to Source Voltage;100V/Gate Charge(Qg);5.4nC@10V/Number;1 N-channel/Pd - Power Dissipation;21W/RDS(on);105mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);3.7pF/Current - Continuous Drain(Id);20A/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input Capacitance;310pF


    N-Channel 100V 20A 21W PRPAK3x3-8L

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