HUASHUO-Single FETs, MOSFETs-HSBB0056

Description

Drain to Source Voltage;100V/Gate Charge(Qg);17.9nC@10V/Number;1 N-channel/Pd - Power Dissipation;28W/RDS(on);16mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);8pF/Current - Continuous Drain(Id);27A/Gate Threshold Voltage (Vgs(th));2.2V/Ciss-Input Capacitance;849pF


N-Channel 100V 27A 28W PRPAK3x3-8

Product form

Drain to Source Voltage;100V/Gate Charge(Qg);17.9nC@10V/Number;1 N-channel/Pd - Power Dissipation;28W/RDS(on);16mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);8pF/Current - Continuous Drain(Id);27A/Gate Threshold Voltage (Vgs(th));2.2V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;100V/Gate Charge(Qg);17.9nC@10V/Number;1 N-channel/Pd - Power Dissipation;28W/RDS(on);16mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);8pF/Current - Continuous Drain(Id);27A/Gate Threshold Voltage (Vgs(th));2.2V/Ciss-Input Capacitance;849pF


    N-Channel 100V 27A 28W PRPAK3x3-8

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