HUASHUO-Single FETs, MOSFETs-HSBB0115

Description

Drain to Source Voltage;100V/Gate Charge(Qg);44.5nC@10V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;35W/RDS(on);95mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);76pF/Current - Continuous Drain(Id);12A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;3.029nF


P-Channel 100V 12A 35W PRPAK3x3-8L

Product form

Drain to Source Voltage;100V/Gate Charge(Qg);44.5nC@10V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;35W/RDS(on);95mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);76pF/Current - Continuous Drain(Id);12A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;100V/Gate Charge(Qg);44.5nC@10V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;35W/RDS(on);95mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);76pF/Current - Continuous Drain(Id);12A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;3.029nF


    P-Channel 100V 12A 35W PRPAK3x3-8L

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