HUASHUO-Single FETs, MOSFETs-HSBB0903

Description

Drain to Source Voltage;100V/Gate Charge(Qg);15nC@4.5V/Number;1 N-Channel + 1 P-Channel/Pd - Power Dissipation;7.8W/RDS(on);100mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);29pF/Current - Continuous Drain(Id);6A;4.2A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;1.229nF


N-Channel+P-Channel Array 100V 6A 4.2A 7.8W PRPAK3x3-8L

Product form

Drain to Source Voltage;100V/Gate Charge(Qg);15nC@4.5V/Number;1 N-Channel + 1 P-Channel/Pd - Power Dissipation;7.8W/RDS(on);100mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);29pF/Current - Continuous Drain(Id);6A;4.2A/Gate... Read more

$4.35 Excl. VAT

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    Description

    Drain to Source Voltage;100V/Gate Charge(Qg);15nC@4.5V/Number;1 N-Channel + 1 P-Channel/Pd - Power Dissipation;7.8W/RDS(on);100mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);29pF/Current - Continuous Drain(Id);6A;4.2A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;1.229nF


    N-Channel+P-Channel Array 100V 6A 4.2A 7.8W PRPAK3x3-8L

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