HUASHUO-Single FETs, MOSFETs-HSBB0903
- HUASHUO
Drain to Source Voltage;100V/Gate Charge(Qg);15nC@4.5V/Number;1 N-Channel + 1 P-Channel/Pd - Power Dissipation;7.8W/RDS(on);100mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);29pF/Current - Continuous Drain(Id);6A;4.2A/Gate... Read more
$4.35 Excl. VAT
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