HUASHUO-Single FETs, MOSFETs-HSBB1260
- HUASHUO
Drain to Source Voltage;12V/Gate Charge(Qg);37nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;62W/RDS(on);2.6mΩ@2.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);940pF/Current - Continuous Drain(Id);100A/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input... Read more
$2.67 Excl. VAT
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