HUASHUO-Single FETs, MOSFETs-HSBB1260

Description

Drain to Source Voltage;12V/Gate Charge(Qg);37nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;62W/RDS(on);2.6mΩ@2.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);940pF/Current - Continuous Drain(Id);100A/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input Capacitance;5.05nF/Output Capacitance(Coss);1.06nF


N-Channel 12V 100A 62W PRPAK3x3-8L

Product form

Drain to Source Voltage;12V/Gate Charge(Qg);37nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;62W/RDS(on);2.6mΩ@2.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);940pF/Current - Continuous Drain(Id);100A/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;12V/Gate Charge(Qg);37nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;62W/RDS(on);2.6mΩ@2.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);940pF/Current - Continuous Drain(Id);100A/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input Capacitance;5.05nF/Output Capacitance(Coss);1.06nF


    N-Channel 12V 100A 62W PRPAK3x3-8L

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